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FDN361BN

Manufacturer:

On Semiconductor

Mfr.Part #:

FDN361BN

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 500 mW 30 V Continuous Drain Current (ID):1.4 A 1.8 nC

ParameterValue
Length1.4 mm
Width2.92 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height940 µm
PackagingReel
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements1
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation460 mW
Power Dissipation500 mW
Threshold Voltage2.1 V
Number of Channels1
Input capacitance193 pF
Continuous Drain Current (ID)1.4 A
Rds On Max110 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time3 ns
Turn-Off Delay Time16 ns
Element ConfigurationSingle
Fall Time8 ns
Rise Time8 ns
Gate Charge1.8 nC
Drain to Source Resistance110 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541210080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)N-Channel

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